NVB6411AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVB6411AN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 217 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 77 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 144 nS
Cossⓘ - Capacitancia de salida: 550 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de NVB6411AN MOSFET
NVB6411AN Datasheet (PDF)
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nvb6412an.pdf

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nvb6410an.pdf

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ntb6412an ntp6412an nvb6412an.pdf

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th
Otros transistores... NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , SKD502T , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , NVD3055-150 , NVD3055L170 , NVD4804N .
History: HM2310C | AO7412



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