All MOSFET. NVB6411AN Datasheet

 

NVB6411AN Datasheet and Replacement


   Type Designator: NVB6411AN
   Marking Code: 6411AN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 217 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 77 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   tr ⓘ - Rise Time: 144 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: D2PAK
 

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NVB6411AN Datasheet (PDF)

 ..1. Size:131K  onsemi
 ntb6411ang nvb6411an.pdf pdf_icon

NVB6411AN

NTB6411AN, NTP6411AN,NVB6411ANN-Channel Power MOSFET100 V, 77 A, 14 mWFeatures Low RDS(on)http://onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 14 mW @ 10 V 77 AQualified and PPAP Capable The

 8.1. Size:77K  onsemi
 nvb6412an.pdf pdf_icon

NVB6411AN

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th

 8.2. Size:77K  onsemi
 nvb6410an.pdf pdf_icon

NVB6411AN

NTB6410AN, NTP6410AN,NVB6410ANN-Channel Power MOSFET100 V, 76 A, 13 mWFeatureswww.onsemi.com Low RDS(on) High Current CapabilityID MAX 100% Avalanche TestedV(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring100 V 13 mW @ 10 V 76 AUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableN-Channel

 8.3. Size:271K  onsemi
 ntb6412an ntp6412an nvb6412an.pdf pdf_icon

NVB6411AN

NTB6412AN, NTP6412AN,NVB6412ANN-Channel Power MOSFET100 V, 58 A, 18.2 mWFeatures Low RDS(on)www.onsemi.com High Current Capability 100% Avalanche TestedID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1)Unique Site and Control Change Requirements; AEC-Q101100 V 18.2 mW @ 10 V 58 AQualified and PPAP Capable Th

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Datasheet: NVA7002NT1G , NVB25P06 , NVB5404N , NVB5426N , NVB5860N , NVB5860NL , NVB60N06 , NVB6410AN , SKD502T , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , NVD3055-150 , NVD3055L170 , NVD4804N .

Keywords - NVB6411AN MOSFET datasheet

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