NVB6411AN Datasheet. Specs and Replacement

Type Designator: NVB6411AN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 217 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 77 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 144 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: D2PAK

NVB6411AN substitution

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NVB6411AN datasheet

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NVB6411AN

NTB6411AN, NTP6411AN, NVB6411AN N-Channel Power MOSFET 100 V, 77 A, 14 mW Features Low RDS(on) http //onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 14 mW @ 10 V 77 A Qualified and PPAP Capable The... See More ⇒

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NVB6411AN

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th... See More ⇒

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NVB6411AN

NTB6410AN, NTP6410AN, NVB6410AN N-Channel Power MOSFET 100 V, 76 A, 13 mW Features www.onsemi.com Low RDS(on) High Current Capability ID MAX 100% Avalanche Tested V(BR)DSS RDS(ON) MAX (Note 1) NVB Prefix for Automotive and Other Applications Requiring 100 V 13 mW @ 10 V 76 A Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable N-Channel... See More ⇒

 8.3. Size:271K  onsemi
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NVB6411AN

NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 mW Features Low RDS(on) www.onsemi.com High Current Capability 100% Avalanche Tested ID MAX NVB Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(ON) MAX (Note 1) Unique Site and Control Change Requirements; AEC-Q101 100 V 18.2 mW @ 10 V 58 A Qualified and PPAP Capable Th... See More ⇒

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Detailed specifications: NVA7002NT1G, NVB25P06, NVB5404N, NVB5426N, NVB5860N, NVB5860NL, NVB60N06, NVB6410AN, RFP50N06, NVB6412AN, NVB6413AN, NVD14N03R, NVD20N03L27, NVD3055-094, NVD3055-150, NVD3055L170, NVD4804N

Keywords - NVB6411AN MOSFET specs

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