NVD3055L170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD3055L170
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 69 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.17 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de NVD3055L170 MOSFET
NVD3055L170 Datasheet (PDF)
ntd3055l170 nvd3055l170.pdf

NTD3055L170,NVD3055L170MOSFET Power,N-Channel, Logic Level,DPAK/IPAKwww.onsemi.com9.0 A, 60 VDesigned for low voltage, high speed switching applications in9.0 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgeRDS(on) = 170 mWcircuits.DFeatures NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Chang
nvd3055l170.pdf

NTD3055L170,NVD3055L170Power MOSFET9.0 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.9.0 AMPERES, 60 VOLTSRDS(on) = 170 mWFeatures NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change R
nvd3055l170.pdf

isc N-Channel MOSFET Transistor NVD3055L170FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
ntd3055-150 nvd3055-150.pdf

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements
Otros transistores... NVB6410AN , NVB6411AN , NVB6412AN , NVB6413AN , NVD14N03R , NVD20N03L27 , NVD3055-094 , NVD3055-150 , IRFZ24N , NVD4804N , NVD4805N , NVD4806N , NVD4808N , NVD4809N , NVD4810N , NVD4813NH , NVD4856N .
History: 7N60F | SI2372DS | FDD6296
History: 7N60F | SI2372DS | FDD6296



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP50N20MP | AP50N10P | AP50N10D | AP50N06NF | AP50N06D | AP50N05D | AP50N04D | AP50N03DF | AP50N03D | AP50N03AD | AP50H06NF | AP50G03GD | AP4P05MI | AP4N15MI | AP4N10MI | AP2320MI
Popular searches
c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b