Справочник MOSFET. NVD3055L170

 

NVD3055L170 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVD3055L170
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NVD3055L170

 

 

NVD3055L170 Datasheet (PDF)

 ..1. Size:238K  onsemi
 ntd3055l170 nvd3055l170.pdf

NVD3055L170 NVD3055L170

NTD3055L170,NVD3055L170MOSFET Power,N-Channel, Logic Level,DPAK/IPAKwww.onsemi.com9.0 A, 60 VDesigned for low voltage, high speed switching applications in9.0 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgeRDS(on) = 170 mWcircuits.DFeatures NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Chang

 ..2. Size:115K  onsemi
 nvd3055l170.pdf

NVD3055L170 NVD3055L170

NTD3055L170,NVD3055L170Power MOSFET9.0 A, 60 V, Logic Level, N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.9.0 AMPERES, 60 VOLTSRDS(on) = 170 mWFeatures NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change R

 ..3. Size:261K  inchange semiconductor
 nvd3055l170.pdf

NVD3055L170 NVD3055L170

isc N-Channel MOSFET Transistor NVD3055L170FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

 7.1. Size:123K  onsemi
 ntd3055-150 nvd3055-150.pdf

NVD3055L170 NVD3055L170

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements

 7.2. Size:112K  onsemi
 nvd3055-094.pdf

NVD3055L170 NVD3055L170

NTD3055-094, NVD3055-094Power MOSFET12 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.Featureshttp://onsemi.com Lower RDS(on) Lower VDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower and Tighter VSD60 V 94 mW 12 A Lower Diode Reverse Recovery Time Low

 7.3. Size:146K  onsemi
 ntd3055-094 nvd3055-094.pdf

NVD3055L170 NVD3055L170

NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D

 7.4. Size:103K  onsemi
 nvd3055-150.pdf

NVD3055L170 NVD3055L170

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requireme

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