NVD3055L170 Datasheet. Specs and Replacement
Type Designator: NVD3055L170 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: DPAK
NVD3055L170 substitution
- MOSFET ⓘ Cross-Reference Search
NVD3055L170 datasheet
ntd3055l170 nvd3055l170.pdf
NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge RDS(on) = 170 mW circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang... See More ⇒
nvd3055l170.pdf
NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 9.0 AMPERES, 60 VOLTS RDS(on) = 170 mW Features NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change R... See More ⇒
nvd3055l170.pdf
isc N-Channel MOSFET Transistor NVD3055L170 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
ntd3055-150 nvd3055-150.pdf
NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge www.onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change Requirements... See More ⇒
Detailed specifications: NVB6410AN, NVB6411AN, NVB6412AN, NVB6413AN, NVD14N03R, NVD20N03L27, NVD3055-094, NVD3055-150, STF13NM60N, NVD4804N, NVD4805N, NVD4806N, NVD4808N, NVD4809N, NVD4810N, NVD4813NH, NVD4856N
Keywords - NVD3055L170 MOSFET specs
NVD3055L170 cross reference
NVD3055L170 equivalent finder
NVD3055L170 pdf lookup
NVD3055L170 substitution
NVD3055L170 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASDM30DN30E | ASDM3050KQ | ASDM2305 | ASDM2301 | ASDM2300ZA | ASDM20P13S | ASDM20N90Q | ASDM20N60 | ASDM7002EZA | ASDM68N80KQ
Popular searches
c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b
