NVD5802N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NVD5802N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 93.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 101 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 850 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de NVD5802N MOSFET
NVD5802N Datasheet (PDF)
nvd5802n.pdf

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin
ntd5802n nvd5802n.pdf

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring
nvd5807n.pdf

NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight
nvd5805n.pdf

NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices
Otros transistores... NVD4810N , NVD4813NH , NVD4856N , NVD4C05N , NVD5117PL , NVD5414N , NVD5484NL , NVD5490NL , 60N06 , NVD5805N , NVD5806N , NVD5807N , NVD5890NL , NVD5890NT4G , NVD6414AN , NVD6415AN , NVD6416AN .
History: IRF4104SPBF
History: IRF4104SPBF



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