All MOSFET. NVD5802N Datasheet

 

NVD5802N Datasheet and Replacement


   Type Designator: NVD5802N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 101 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: DPAK
 

 NVD5802N substitution

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NVD5802N Datasheet (PDF)

 ..1. Size:98K  onsemi
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NVD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin

 ..2. Size:118K  onsemi
ntd5802n nvd5802n.pdf pdf_icon

NVD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring

 8.1. Size:71K  onsemi
nvd5807n.pdf pdf_icon

NVD5802N

NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight

 8.2. Size:133K  onsemi
nvd5805n.pdf pdf_icon

NVD5802N

NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices

Datasheet: NVD4810N , NVD4813NH , NVD4856N , NVD4C05N , NVD5117PL , NVD5414N , NVD5484NL , NVD5490NL , 60N06 , NVD5805N , NVD5806N , NVD5807N , NVD5890NL , NVD5890NT4G , NVD6414AN , NVD6415AN , NVD6416AN .

History: FTK2N65P

Keywords - NVD5802N MOSFET datasheet

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