All MOSFET. NVD5802N Datasheet

 

NVD5802N MOSFET. Datasheet pdf. Equivalent


   Type Designator: NVD5802N
   Marking Code: 5802N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 101 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: DPAK

 NVD5802N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVD5802N Datasheet (PDF)

 ..1. Size:98K  onsemi
 nvd5802n.pdf

NVD5802N NVD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin

 ..2. Size:118K  onsemi
 ntd5802n nvd5802n.pdf

NVD5802N NVD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring

 8.1. Size:71K  onsemi
 nvd5807n.pdf

NVD5802N NVD5802N

NTD5807N, NVD5807NPower MOSFET40 V, 23 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5807NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant37 mW @ 4.5 V 16 A40 VApplications31 mW @ 10 V 23 A CCFL Backlight

 8.2. Size:133K  onsemi
 nvd5805n.pdf

NVD5802N NVD5802N

NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices

 8.3. Size:104K  onsemi
 nvd5803n.pdf

NVD5802N NVD5802N

NVD5803NPower MOSFET40 V, 85 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant40 V 5.7 mW @ 10 V 85 AApplications DC Motor DriveD Reverse Battery Protection G

 8.4. Size:99K  onsemi
 nvd5806n.pdf

NVD5802N NVD5802N

NTD5806N, NVD5806NPower MOSFET40 V, 33 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant26 mW @ 4.5 V40 V33 AApplications19 mW @ 10 V CCFL BacklightD

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