NVD5802N Datasheet. Specs and Replacement

Type Designator: NVD5802N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 101 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: DPAK

NVD5802N substitution

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NVD5802N datasheet

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NVD5802N

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requirin... See More ⇒

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NVD5802N

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring ... See More ⇒

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NVD5802N

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NVD5802N

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices... See More ⇒

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Detailed specifications: NVD4810N, NVD4813NH, NVD4856N, NVD4C05N, NVD5117PL, NVD5414N, NVD5484NL, NVD5490NL, IRLB3034, NVD5805N, NVD5806N, NVD5807N, NVD5890NL, NVD5890NT4G, NVD6414AN, NVD6415AN, NVD6416AN

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