NVGS4141N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVGS4141N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TSOP-6

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NVGS4141N datasheet

 ..1. Size:202K  onsemi
 ntgs4141n nvgs4141n.pdf pdf_icon

NVGS4141N

NTGS4141N, NVGS4141N MOSFET Power, Single, N-Channel, TSOP-6 30 V, 7.0 A Features Low RDS(on) http //onsemi.com Low Gate Charge NV Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) TYP ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 21.5 mW @ 10 V Pb-Free Package is Available 30 V 7.0 A 30 mW @ 4.5

 ..2. Size:113K  onsemi
 nvgs4141n.pdf pdf_icon

NVGS4141N

NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6 Features Low RDS(on) Low Gate Charge NV Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 21.5 mW @ 10 V Applications 30 V 7.0 A 30 mW

 8.1. Size:203K  onsemi
 ntgs4111p nvgs4111p.pdf pdf_icon

NVGS4141N

NTGS4111P, NVGS4111P MOSFET Power, Single, P-Channel, TSOP-6 -30 V, -4.7 A Features http //onsemi.com Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications V(BR)DSS RDS(on) TYP ID MAX Surface Mount TSOP-6 Package Saves Board Space 38 mW @ -10 V Improved Efficiency for Battery Applications -30 V -4.7 A 68 mW @ -4.5 V

 8.2. Size:113K  onsemi
 nvgs4111p.pdf pdf_icon

NVGS4141N

NTGS4111P, NVGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features Leading -30 V Trench Process for Low RDS(on) Low Profile Package Suitable for Portable Applications http //onsemi.com Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX Improved Efficiency for Battery Applications NV Prefix for Automotive and Other Applications

MOSTRAR MÁS

Otros transistores... NVF3055L108, NVF5P03, NVF6P02, NVGS3130N, NVGS3136P, NVGS3441, NVGS3443, NVGS4111P, IRFB4110, NVGS5120P, NVJD4152P, NVJD4158C, NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N