All MOSFET. NVGS4141N Datasheet


NVGS4141N MOSFET. Datasheet pdf. Equivalent

Type Designator: NVGS4141N

Marking Code: VS4

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 115 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TSOP-6

NVGS4141N Transistor Equivalent Substitute - MOSFET Cross-Reference Search


NVGS4141N Datasheet (PDF)

1.1. nvgs4141n.pdf Size:113K _update_mosfet


NTGS4141N, NVGS4141N Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6 Features • Low RDS(on) • Low Gate Charge • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(on) TYP ID MAX • Pb-Free Package is Available 21.5 mW @ 10 V Applications 30 V 7.0 A 30 mW

4.1. nvgs4111p.pdf Size:113K _update_mosfet


NTGS4111P, NVGS4111P Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6 Features • Leading -30 V Trench Process for Low RDS(on) • Low Profile Package Suitable for Portable Applications • Surface Mount TSOP-6 Package Saves Board Space V(BR)DSS RDS(on) TYP ID MAX • Improved Efficiency for Battery Applications • NV Prefix for Automotive and Other Applications


Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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