NVJD4152P Todos los transistores

 

NVJD4152P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVJD4152P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: SC-88
 

 Búsqueda de reemplazo de NVJD4152P MOSFET

   - Selección ⓘ de transistores por parámetros

 

NVJD4152P datasheet

 ..1. Size:126K  onsemi
ntjd4152p nvjd4152p.pdf pdf_icon

NVJD4152P

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an... See More ⇒

 ..2. Size:65K  onsemi
nvjd4152p.pdf pdf_icon

NVJD4152P

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch... See More ⇒

 7.1. Size:82K  onsemi
nvjd4158c.pdf pdf_icon

NVJD4152P

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require... See More ⇒

 7.2. Size:142K  onsemi
ntjd4158c nvjd4158c.pdf pdf_icon

NVJD4152P

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont... See More ⇒

Otros transistores... NVF6P02 , NVGS3130N , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , IRFP260N , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N .

 

 
Back to Top

 


NVJD4152P  NVJD4152P  NVJD4152P 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: APG011N04G | APG011N03G | APC65R190FM | APC60R030WMF | AP9N20K | AP9565K | AP90P03K | AP90N04Q | AP90N04K | AP90N04G | AP90N03GD | AP85P04G | AP85N04Q | AP85N04K | AP85N04G | AP80P04K

 

 

 
Back to Top

 

Popular searches

tip147 datasheet | 2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568

 


 
.