NVJD4152P - аналоги, параметры транзистора - Справочник транзисторов

NVJD4152P технические параметры

..1. Size:126K onsemi
ntjd4152p nvjd4152p.pdf pdf_icon

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an

..2. Size:65K onsemi
nvjd4152p.pdf pdf_icon

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch

7.1. Size:82K onsemi
nvjd4158c.pdf pdf_icon

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require

7.2. Size:142K onsemi
ntjd4158c nvjd4158c.pdf pdf_icon

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont