All MOSFET. NVJD4152P Datasheet

 

NVJD4152P MOSFET. Datasheet pdf. Equivalent

Type Designator: NVJD4152P

Marking Code: VTK

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 2.2 nC

Rise Time (tr): 6.5 nS

Drain-Source Capacitance (Cd): 25 pF

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: SC-88

NVJD4152P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NVJD4152P Datasheet (PDF)

1.1. nvjd4152p.pdf Size:65K _update_mosfet

NVJD4152P
NVJD4152P

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features • Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com • Small Footprint Package (SC70-6 Equivalent) • ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch

1.2. nvjd4152p.pdf Size:65K _onsemi

NVJD4152P
NVJD4152P

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features • Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com • Small Footprint Package (SC70-6 Equivalent) • ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch

 3.1. nvjd4158c.pdf Size:82K _update_mosfet

NVJD4152P
NVJD4152P

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features • Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com • ESD Protected Gate • SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require

3.2. nvjd4158c.pdf Size:82K _onsemi

NVJD4152P
NVJD4152P

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features • Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com • ESD Protected Gate • SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max • NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require

Datasheet: NVF6P02 , NVGS3130N , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , IRF3710 , NVJD4158C , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N .

 

 
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