NVJD4152P
MOSFET. Datasheet pdf. Equivalent
Type Designator: NVJD4152P
Marking Code: VTK
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.2
nC
trⓘ - Rise Time: 6.5
nS
Cossⓘ -
Output Capacitance: 25
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26
Ohm
Package:
SC-88
NVJD4152P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NVJD4152P
Datasheet (PDF)
..1. Size:126K onsemi
ntjd4152p nvjd4152p.pdf 
NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an
..2. Size:65K onsemi
nvjd4152p.pdf
NTJD4152P, NVJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) Performancewww.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected GateV(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique215 mW @ -4.5 VSite and Control Ch
7.1. Size:82K onsemi
nvjd4158c.pdf
NTJD4158C, NVJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Features Leading 20 V Trench for Low RDS(on) Performancewww.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm)V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique1.0 W @ 4.5 VN-ChSite and Control Change Require
7.2. Size:142K onsemi
ntjd4158c nvjd4158c.pdf
NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont
9.1. Size:62K onsemi
nvjd4401n.pdf
NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant
9.2. Size:67K onsemi
ntjd4401n nvjd4401n.pdf
NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant
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