NVJD4158C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVJD4158C

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

Cossⓘ - Capacitancia de salida: 19 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: SOT-363

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NVJD4158C datasheet

 ..1. Size:82K  onsemi
 nvjd4158c.pdf pdf_icon

NVJD4158C

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require

 ..2. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf pdf_icon

NVJD4158C

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont

 7.1. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf pdf_icon

NVJD4158C

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an

 7.2. Size:65K  onsemi
 nvjd4152p.pdf pdf_icon

NVJD4158C

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch

MOSTRAR MÁS

Otros transistores... NVGS3130N, NVGS3136P, NVGS3441, NVGS3443, NVGS4111P, NVGS4141N, NVGS5120P, NVJD4152P, AO3400, NVJD4401N, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03