NVJD4158C PDF and Equivalents Search

 

NVJD4158C Specs and Replacement

Type Designator: NVJD4158C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 19 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: SOT-363

NVJD4158C substitution

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NVJD4158C datasheet

 ..1. Size:82K  onsemi
nvjd4158c.pdf pdf_icon

NVJD4158C

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require... See More ⇒

 ..2. Size:142K  onsemi
ntjd4158c nvjd4158c.pdf pdf_icon

NVJD4158C

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont... See More ⇒

 7.1. Size:126K  onsemi
ntjd4152p nvjd4152p.pdf pdf_icon

NVJD4158C

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an... See More ⇒

 7.2. Size:65K  onsemi
nvjd4152p.pdf pdf_icon

NVJD4158C

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch... See More ⇒

Detailed specifications: NVGS3130N , NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , NVJD4152P , AO3400 , NVJD4401N , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N , NVMD3P03 .

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