NVJD4401N Datasheet. Equivalente

 ..1. Size:62K  onsemi
 nvjd4401n.pdf

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 ..2. Size:67K  onsemi
 ntjd4401n nvjd4401n.pdf

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 9.1. Size:82K  onsemi
 nvjd4158c.pdf

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require

 9.2. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an

 9.3. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf

NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont

 9.4. Size:65K  onsemi
 nvjd4152p.pdf

NTJD4152P, NVJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features Leading Trench Technology for Low RDS(ON) Performance www.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 215 mW @ -4.5 V Site and Control Ch