NVJD4401N Todos los transistores

 

NVJD4401N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NVJD4401N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.63 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 0.227 nS
   Cossⓘ - Capacitancia de salida: 13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.375 Ohm
   Paquete / Cubierta: SOT-363
 

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NVJD4401N Datasheet (PDF)

 ..1. Size:62K  onsemi
nvjd4401n.pdf pdf_icon

NVJD4401N

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 ..2. Size:67K  onsemi
ntjd4401n nvjd4401n.pdf pdf_icon

NVJD4401N

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 9.1. Size:82K  onsemi
nvjd4158c.pdf pdf_icon

NVJD4401N

NTJD4158C, NVJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Features Leading 20 V Trench for Low RDS(on) Performancewww.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm)V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique1.0 W @ 4.5 VN-ChSite and Control Change Require

 9.2. Size:126K  onsemi
ntjd4152p nvjd4152p.pdf pdf_icon

NVJD4401N

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

Otros transistores... NVGS3136P , NVGS3441 , NVGS3443 , NVGS4111P , NVGS4141N , NVGS5120P , NVJD4152P , NVJD4158C , AON6414A , NVJD5121N , NVJS3151P , NVJS4151P , NVJS4405N , NVLJD4007NZ , NVLUS4C12N , NVMD3P03 , NVMD4N03 .

History: HSS2N7002K | IPB100N04S4-H2 | PHB23NQ10LT | 75N75L-TQ2-R | PHP36N03LT | PMXB56EN | QM3006M3

 

 
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