NVJD4401N Datasheet. Specs and Replacement

Type Designator: NVJD4401N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 0.227 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.375 Ohm

Package: SOT-363

NVJD4401N substitution

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NVJD4401N datasheet

 ..1. Size:62K  onsemi
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NVJD4401N

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant ... See More ⇒

 ..2. Size:67K  onsemi
ntjd4401n nvjd4401n.pdf pdf_icon

NVJD4401N

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant ... See More ⇒

 9.1. Size:82K  onsemi
nvjd4158c.pdf pdf_icon

NVJD4401N

NTJD4158C, NVJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features Leading 20 V Trench for Low RDS(on) Performance www.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm) V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique 1.0 W @ 4.5 V N-Ch Site and Control Change Require... See More ⇒

 9.2. Size:126K  onsemi
ntjd4152p nvjd4152p.pdf pdf_icon

NVJD4401N

NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an... See More ⇒

Detailed specifications: NVGS3136P, NVGS3441, NVGS3443, NVGS4111P, NVGS4141N, NVGS5120P, NVJD4152P, NVJD4158C, IRFB4227, NVJD5121N, NVJS3151P, NVJS4151P, NVJS4405N, NVLJD4007NZ, NVLUS4C12N, NVMD3P03, NVMD4N03

Keywords - NVJD4401N MOSFET specs

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