Справочник MOSFET. NVJD4401N

 

NVJD4401N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NVJD4401N
   Маркировка: TD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.63 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 1.3 nC
   trⓘ - Время нарастания: 0.227 ns
   Cossⓘ - Выходная емкость: 13 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.375 Ohm
   Тип корпуса: SOT-363

 Аналог (замена) для NVJD4401N

 

 

NVJD4401N Datasheet (PDF)

 ..1. Size:62K  onsemi
 nvjd4401n.pdf

NVJD4401N NVJD4401N

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 ..2. Size:67K  onsemi
 ntjd4401n nvjd4401n.pdf

NVJD4401N NVJD4401N

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 9.1. Size:82K  onsemi
 nvjd4158c.pdf

NVJD4401N NVJD4401N

NTJD4158C, NVJD4158CSmall Signal MOSFET30 V/-20 V, +0.25/-0.88 A,Complementary, SC-88Features Leading 20 V Trench for Low RDS(on) Performancewww.onsemi.com ESD Protected Gate SC-88 Package for Small Footprint (2 x 2 mm)V(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique1.0 W @ 4.5 VN-ChSite and Control Change Require

 9.2. Size:126K  onsemi
 ntjd4152p nvjd4152p.pdf

NVJD4401N NVJD4401N

NTJD4152P, NVJD4152PMOSFET Dual, P-Channel,Trench Small Signal, ESDProtected, SC-8820 V, 0.88 AFeatureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique-20 VSite an

 9.3. Size:142K  onsemi
 ntjd4158c nvjd4158c.pdf

NVJD4401N NVJD4401N

NTJD4158C, NVJD4158CMOSFET Small Signal,Complementary, SC-8830 V/-20 V, +0.25/-0.88 AFeatureswww.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected GateV(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm)1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring UniqueN-Ch0.25 A30 VSite and Cont

 9.4. Size:65K  onsemi
 nvjd4152p.pdf

NVJD4401N NVJD4401N

NTJD4152P, NVJD4152PTrench Small SignalMOSFET20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88Features Leading Trench Technology for Low RDS(ON) Performancewww.onsemi.com Small Footprint Package (SC70-6 Equivalent) ESD Protected GateV(BR)DSS RDS(on) Typ ID Max NV Prefix for Automotive and Other Applications Requiring Unique215 mW @ -4.5 VSite and Control Ch

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