NVTFS4C10N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NVTFS4C10N  📄📄 

Código: 10WF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V

Qgⓘ - Carga de la puerta: 10.1 nC

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 574 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm

Encapsulados: WDFN8

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NVTFS4C10N datasheet

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NVTFS4C10N

NVTFS4C10N Power MOSFET 30 V, 7.4 mW, 47 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring 7.4 mW @ 1

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 nvtfs4c13n.pdf pdf_icon

NVTFS4C10N

NVTFS4C13N Power MOSFET 30 V, 9.4 mW, 40 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 9.4 mW @ 1

 7.1. Size:82K  onsemi
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NVTFS4C10N

NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product 17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

 7.2. Size:81K  onsemi
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NVTFS4C10N

NVTFS4C06N Power MOSFET 30 V, 4.2 mW, 71 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 4.2 mW @ 1

MOSTRAR MÁS

Otros transistores... NVR4501N, NVR5198NL, NVS4001N, NVS4409N, NVTA7002N, NVTFS4C05N, NVTFS4C06N, NVTFS4C08N, AO3407, NVTFS4C13N, NVTFS4C25N, NVTFS5124PL, NVTJD4001N, NVTR01P02L, NVTR0202PL, NVTR4502P, NVTR4503N