NVTFS4C10N MOSFET Datasheet: N-Ch, 30V, 15.3A. Full specification with pinout and replacement list

NVTFS4C10N Specs and Replacement

   Type Designator: NVTFS4C10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 574 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0074 Ohm
   Package: WDFN8

NVTFS4C10N substitution

- MOSFET ⓘ Cross-Reference Search

NVTFS4C10N datasheet

..1. Size:78K onsemi
nvtfs4c10n.pdf pdf_icon

NVTFS4C10N Power MOSFET 30 V, 7.4 mW, 47 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C10NWF - Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring 7.4 mW @ 1... See More ⇒

6.1. Size:80K onsemi
nvtfs4c13n.pdf pdf_icon

NVTFS4C13N Power MOSFET 30 V, 9.4 mW, 40 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C13NWF - Wettable Flanks Product V(BR)DSS RDS(ON) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 9.4 mW @ 1... See More ⇒

7.1. Size:82K onsemi
nvtfs4c25n.pdf pdf_icon

NVTFS4C25N Power MOSFET 30 V, 17 mW, 22 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product 17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring... See More ⇒

7.2. Size:81K onsemi
nvtfs4c06n.pdf pdf_icon

NVTFS4C06N Power MOSFET 30 V, 4.2 mW, 71 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses NVTFS4C06NWF - Wettable Flanks Product V(BR)DSS RDS(on) MAX ID MAX NVT Prefix for Automotive and Other Applications Requiring 4.2 mW @ 1... See More ⇒