PH20100S Todos los transistores

 

PH20100S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PH20100S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 34.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: LFPAK
 

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PH20100S datasheet

 ..1. Size:175K  philips
 ph20100s.pdf pdf_icon

PH20100S

PH20100S N-channel TrenchMOS standard level FET Rev. 03 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

 ..2. Size:175K  nxp
 ph20100s.pdf pdf_icon

PH20100S

PH20100S N-channel TrenchMOS standard level FET Rev. 03 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

 8.1. Size:232K  toshiba
 tph2010fnh.pdf pdf_icon

PH20100S

TPH2010FNH MOSFETs Silicon N-channel MOS (U-MOS -H) TPH2010FNH TPH2010FNH TPH2010FNH TPH2010FNH 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 2.6 nC (typ.) (3) Low drain-source on-resista

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