PH20100S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH20100S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 62.5 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 34.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 39 nC

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 290 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: LFPAK

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PH20100S Datasheet (PDF)

1.1. ph20100s.pdf Size:175K _update_mosfet

PH20100S N-channel TrenchMOS standard level FET Rev. 03 — 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feat

1.2. ph20100s.pdf Size:175K _philips

PH20100S N-channel TrenchMOS standard level FET Rev. 03 � 2 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features

4.1. tph2010fnh.pdf Size:232K _update_mosfet

TPH2010FNH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2010FNH TPH2010FNH TPH2010FNH TPH2010FNH 1. Applications 1. Applications 1. Applications 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge: QSW = 2.6 nC (typ.) (3) Low drain-source on-resista

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