PH20100S
MOSFET. Datasheet pdf. Equivalent
Type Designator: PH20100S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 34.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023
Ohm
Package:
LFPAK
PH20100S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH20100S
Datasheet (PDF)
..1. Size:175K philips
ph20100s.pdf
PH20100SN-channel TrenchMOS standard level FETRev. 03 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
..2. Size:175K nxp
ph20100s.pdf
PH20100SN-channel TrenchMOS standard level FETRev. 03 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
8.1. Size:232K toshiba
tph2010fnh.pdf
TPH2010FNHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2010FNHTPH2010FNHTPH2010FNHTPH2010FNH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista
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