PH20100S Datasheet and Replacement
Type Designator: PH20100S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: LFPAK
PH20100S substitution
PH20100S Datasheet (PDF)
ph20100s.pdf

PH20100SN-channel TrenchMOS standard level FETRev. 03 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
ph20100s.pdf

PH20100SN-channel TrenchMOS standard level FETRev. 03 2 February 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feat
tph2010fnh.pdf

TPH2010FNHMOSFETs Silicon N-channel MOS (U-MOS-H)TPH2010FNHTPH2010FNHTPH2010FNHTPH2010FNH1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 2.6 nC (typ.)(3) Low drain-source on-resista
Datasheet: PH1225AL , PH1330AL , PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , PH1955L , IRFB4110 , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , PH3830L .
History: IRFZ34S | 2SJ421 | RJL6012DPE | AOI9N50
Keywords - PH20100S MOSFET datasheet
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History: IRFZ34S | 2SJ421 | RJL6012DPE | AOI9N50



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