PH2530AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH2530AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 88 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 710 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
Paquete / Cubierta: LFPAK
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PH2530AL Datasheet (PDF)
ph2530al.pdf

PH2530ALN-channel TrenchMOS logic level FETRev. 05 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph2530al.pdf

PH2530ALN-channel TrenchMOS logic level FETRev. 05 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
Otros transistores... PH16030L , PH1730AL , PH1825AL , PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , IRF9540 , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , PH3830L , PH3855L , PH4025L .
History: 2SJ328-Z | HM60N20 | H7N0401LS | IRFI520GPBF | HGS290N10SL | F3V90HVX2 | TPW65R040M
History: 2SJ328-Z | HM60N20 | H7N0401LS | IRFI520GPBF | HGS290N10SL | F3V90HVX2 | TPW65R040M



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