All MOSFET. PH2530AL Datasheet

 

PH2530AL Datasheet and Replacement


   Type Designator: PH2530AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: LFPAK
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PH2530AL Datasheet (PDF)

 ..1. Size:230K  philips
 ph2530al.pdf pdf_icon

PH2530AL

PH2530ALN-channel TrenchMOS logic level FETRev. 05 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 ..2. Size:230K  nxp
 ph2530al.pdf pdf_icon

PH2530AL

PH2530ALN-channel TrenchMOS logic level FETRev. 05 14 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

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History: WMM11N80M3 | IRFI7536G | RFP2N10L | FDMS9620S | AM2314NE

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