All MOSFET. PH2530AL Datasheet

 

PH2530AL MOSFET. Datasheet pdf. Equivalent

Type Designator: PH2530AL

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 88 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.15 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 27 nC

Rise Time (tr): 62 nS

Drain-Source Capacitance (Cd): 710 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0024 Ohm

Package: LFPAK

PH2530AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH2530AL Datasheet (PDF)

1.1. ph2530al.pdf Size:230K _update_mosfet

PH2530AL
PH2530AL

PH2530AL N-channel TrenchMOS logic level FET Rev. 05 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

1.2. ph2530al.pdf Size:230K _philips

PH2530AL
PH2530AL

PH2530AL N-channel TrenchMOS logic level FET Rev. 05 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to l

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top