PH3230S Todos los transistores

 

PH3230S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH3230S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 62.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Carga de compuerta (Qg): 42 nC

Tiempo de elevación (tr): 37 nS

Conductancia de drenaje-sustrato (Cd): 1150 pF

Resistencia drenaje-fuente RDS(on): 0.0032 Ohm

Empaquetado / Estuche: LFPAK

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PH3230S Datasheet (PDF)

1.1. ph3230s.pdf Size:361K _update_mosfet

PH3230S
PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2. ph3230s.pdf Size:361K _philips

PH3230S
PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 

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