All MOSFET. PH3230S Datasheet

 

PH3230S Datasheet and Replacement


   Type Designator: PH3230S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: LFPAK
 

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PH3230S Datasheet (PDF)

 ..1. Size:361K  philips
 ph3230s.pdf pdf_icon

PH3230S

PH3230SN-channel TrenchMOS intermediate level FETRev. 04 27 November 2009 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

 ..2. Size:361K  nxp
 ph3230s.pdf pdf_icon

PH3230S

PH3230SN-channel TrenchMOS intermediate level FETRev. 04 27 November 2009 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Datasheet: PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , STP75NF75 , PH3330L , PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L .

History: FSS923AOD | PSMN3R0-60ES | 2SK3141 | FDD2582 | IRLB3036PBF | IPD60R3K3C6 | QM2413V

Keywords - PH3230S MOSFET datasheet

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