PH3230S Datasheet and Replacement
Type Designator: PH3230S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 1150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: LFPAK
PH3230S Datasheet (PDF)
ph3230s.pdf
PH3230SN-channel TrenchMOS intermediate level FETRev. 04 27 November 2009 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
ph3230s.pdf
PH3230SN-channel TrenchMOS intermediate level FETRev. 04 27 November 2009 Product data sheet1. Product profile1.1 General descriptionIntermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Datasheet: PH1875L , PH1930AL , PH1955L , PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , STP75NF75 , PH3330L , PH3430AL , PH3830L , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L .
History: MTB13N03Q8
Keywords - PH3230S MOSFET datasheet
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History: MTB13N03Q8
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