PH3230S MOSFET. Datasheet pdf. Equivalent
Type Designator: PH3230S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 42 nC
Rise Time (tr): 37 nS
Drain-Source Capacitance (Cd): 1150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: LFPAK
PH3230S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH3230S Datasheet (PDF)
1.1. ph3230s.pdf 
Size:361K _update_mosfet
PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2. ph3230s.pdf Size:361K _philips
PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
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