All MOSFET. PH3230S Datasheet

 

PH3230S MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3230S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 42 nC

Rise Time (tr): 37 nS

Drain-Source Capacitance (Cd): 1150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm

Package: LFPAK

PH3230S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH3230S Datasheet (PDF)

1.1. ph3230s.pdf Size:361K _update_mosfet

PH3230S PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 — 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2. ph3230s.pdf Size:361K _philips

PH3230S PH3230S

PH3230S N-channel TrenchMOS intermediate level FET Rev. 04 27 November 2009 Product data sheet 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F

 

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