PH3830L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH3830L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 98 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 88 nS
Cossⓘ - Capacitancia de salida: 1050 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Paquete / Cubierta: LFPAK
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PH3830L Datasheet (PDF)
ph3830l.pdf

PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
ph3830l.pdf

PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
Otros transistores... PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , K3569 , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL .
History: APT12067LLLG | RFP4N06L | STT3PF20V | 2SK523 | PMBFJ174 | AP02N60I | SI1551DL
History: APT12067LLLG | RFP4N06L | STT3PF20V | 2SK523 | PMBFJ174 | AP02N60I | SI1551DL



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