PH3830L Datasheet and Replacement
Type Designator: PH3830L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 98 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 1050 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: LFPAK
PH3830L substitution
PH3830L Datasheet (PDF)
ph3830l.pdf
PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
ph3830l.pdf
PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
Datasheet: PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , K3569 , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL .
History: 2N7271R4
Keywords - PH3830L MOSFET datasheet
PH3830L cross reference
PH3830L equivalent finder
PH3830L lookup
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History: 2N7271R4
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