All MOSFET. PH3830L Datasheet

 

PH3830L MOSFET. Datasheet pdf. Equivalent

Type Designator: PH3830L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 62.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 98 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 33 nC

Rise Time (tr): 88 nS

Drain-Source Capacitance (Cd): 1050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm

Package: LFPAK

PH3830L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PH3830L Datasheet (PDF)

1.1. ph3830l.pdf Size:186K _update_mosfet

PH3830L
PH3830L

PH3830L N-channel TrenchMOS logic level FET Rev. 04 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a

1.2. ph3830l.pdf Size:186K _philips

PH3830L
PH3830L

PH3830L N-channel TrenchMOS logic level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and be

 

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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