PH3830L MOSFET. Datasheet pdf. Equivalent
Type Designator: PH3830L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 98 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 33 nC
Rise Time (tr): 88 nS
Drain-Source Capacitance (Cd): 1050 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0038 Ohm
Package: LFPAK
PH3830L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH3830L Datasheet (PDF)
1.1. ph3830l.pdf 
Size:186K _update_mosfet
PH3830L N-channel TrenchMOS logic level FET Rev. 04 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a
1.2. ph3830l.pdf Size:186K _philips
PH3830L N-channel TrenchMOS logic level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and be
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
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