All MOSFET. PH3830L Datasheet

 

PH3830L Datasheet and Replacement


   Type Designator: PH3830L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 98 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: LFPAK
 

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PH3830L Datasheet (PDF)

 ..1. Size:186K  philips
 ph3830l.pdf pdf_icon

PH3830L

PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

 ..2. Size:186K  nxp
 ph3830l.pdf pdf_icon

PH3830L

PH3830LN-channel TrenchMOS logic level FETRev. 04 17 November 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: PH20100S , PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , K3569 , PH3855L , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL .

History: 2N7000 | 2N5519 | SIZ710DT | 2SK2417 | 2N5907 | IRFY130C | H0110D

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