PH3855L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH3855L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 93 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Paquete / Cubierta: LFPAK
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PH3855L Datasheet (PDF)
ph3855l.pdf

PH3855LN-channel TrenchMOS logic level FETRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
ph3855l.pdf

PH3855LN-channel TrenchMOS logic level FETRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a
Otros transistores... PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , PH3830L , IRLZ44N , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL , PH5330E .
History: SIHFR9210 | 8N60L-TF1-T | CS630A8H | IPB107N20N3 | FQA90N15-F109
History: SIHFR9210 | 8N60L-TF1-T | CS630A8H | IPB107N20N3 | FQA90N15-F109



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