All MOSFET. PH3855L Datasheet

 

PH3855L Datasheet and Replacement


   Type Designator: PH3855L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 93 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: LFPAK
 

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PH3855L Datasheet (PDF)

 ..1. Size:184K  philips
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PH3855L

PH3855LN-channel TrenchMOS logic level FETRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

 ..2. Size:184K  nxp
 ph3855l.pdf pdf_icon

PH3855L

PH3855LN-channel TrenchMOS logic level FETRev. 02 24 February 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: PH2525L , PH2530AL , PH2625L , PH3030AL , PH3230S , PH3330L , PH3430AL , PH3830L , 2N7000 , PH4025L , PH4030AL , PH4330L , PH4530L , PH4830L , PH4840S , PH5030AL , PH5330E .

History: AP9972GP-HF | HSW6811 | FTK12N10S | QM6014S | AON6816 | MMN200H010X | NCE2014ES

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