PH3855L Specs and Replacement

Type Designator: PH3855L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 93 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: LFPAK

PH3855L substitution

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PH3855L datasheet

 ..1. Size:184K  philips
 ph3855l.pdf pdf_icon

PH3855L

PH3855L N-channel TrenchMOS logic level FET Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

 ..2. Size:184K  nxp
 ph3855l.pdf pdf_icon

PH3855L

PH3855L N-channel TrenchMOS logic level FET Rev. 02 24 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a... See More ⇒

Detailed specifications: PH2525L, PH2530AL, PH2625L, PH3030AL, PH3230S, PH3330L, PH3430AL, PH3830L, AON7408, PH4025L, PH4030AL, PH4330L, PH4530L, PH4830L, PH4840S, PH5030AL, PH5330E

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