PH7030AL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PH7030AL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 51 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 76 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 255 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: LFPAK
Búsqueda de reemplazo de PH7030AL MOSFET
PH7030AL Datasheet (PDF)
ph7030al.pdf

PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph7030al.pdf

PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph7030l.pdf

PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
ph7030l.pdf

PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
Otros transistores... PH4830L , PH4840S , PH5030AL , PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , IRFB3607 , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L .
History: HY1N60D | STL140N4LLF5 | AP60WN720IN | HFD3N80 | AP60WN4K9P | ELM36400EA | AP60WN1K5H
History: HY1N60D | STL140N4LLF5 | AP60WN720IN | HFD3N80 | AP60WN4K9P | ELM36400EA | AP60WN1K5H



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