PH7030AL. Аналоги и основные параметры
Наименование производителя: PH7030AL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 255 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PH7030AL
- подборⓘ MOSFET транзистора по параметрам
PH7030AL даташит
ph7030al.pdf
PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
ph7030al.pdf
PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
ph7030l.pdf
PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b
ph7030l.pdf
PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b
Другие IGBT... PH4830L, PH4840S, PH5030AL, PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L, K4145, PH7030L, PH8030L, PH8230E, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L
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Список транзисторов
Обновления
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