PH7030AL Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PH7030AL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 76 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 255 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PH7030AL
PH7030AL Datasheet (PDF)
ph7030al.pdf
PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph7030al.pdf
PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
ph7030l.pdf
PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
ph7030l.pdf
PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
Другие MOSFET... PH4830L , PH4840S , PH5030AL , PH5330E , PH5525L , PH6030AL , PH6030L , PH6325L , IRFB3607 , PH7030L , PH8030L , PH8230E , PH9025L , PH9030AL , PH9030L , PH955L , PH9930L .
History: HGI040N06SL | 2SK4066-E | 2SK1539 | AON5800 | FMR23N60ES | BL3N90E-P | 2SK1835
History: HGI040N06SL | 2SK4066-E | 2SK1539 | AON5800 | FMR23N60ES | BL3N90E-P | 2SK1835
Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
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