PH7030AL
MOSFET. Datasheet pdf. Equivalent
Type Designator: PH7030AL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 51
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.15
V
|Id|ⓘ - Maximum Drain Current: 76
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 10
nC
trⓘ - Rise Time: 39
nS
Cossⓘ -
Output Capacitance: 255
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
LFPAK
PH7030AL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PH7030AL
Datasheet (PDF)
..1. Size:221K philips
ph7030al.pdf
PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
..2. Size:221K nxp
ph7030al.pdf
PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due
8.1. Size:178K philips
ph7030l.pdf
PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
8.2. Size:178K nxp
ph7030l.pdf
PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b
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