PH7030L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PH7030L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 62.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 68 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 544 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm

Encapsulados: LFPAK

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PH7030L datasheet

 ..1. Size:178K  philips
 ph7030l.pdf pdf_icon

PH7030L

PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

 ..2. Size:178K  nxp
 ph7030l.pdf pdf_icon

PH7030L

PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b

 8.1. Size:221K  philips
 ph7030al.pdf pdf_icon

PH7030L

PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

 8.2. Size:221K  nxp
 ph7030al.pdf pdf_icon

PH7030L

PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due

MOSTRAR MÁS

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