PH7030L. Аналоги и основные параметры
Наименование производителя: PH7030L
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 62.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 544 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0079 Ohm
Тип корпуса: LFPAK
Аналог (замена) для PH7030L
- подборⓘ MOSFET транзистора по параметрам
PH7030L даташит
ph7030l.pdf
PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b
ph7030l.pdf
PH7030L N-channel TrenchMOS logic level FET Rev. 05 29 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and b
ph7030al.pdf
PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
ph7030al.pdf
PH7030AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due
Другие IGBT... PH4840S, PH5030AL, PH5330E, PH5525L, PH6030AL, PH6030L, PH6325L, PH7030AL, 13N50, PH8030L, PH8230E, PH9025L, PH9030AL, PH9030L, PH955L, PH9930L, PHK4NQ10T
History: QM04N60F
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Список транзисторов
Обновления
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
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