All MOSFET. PH7030L Datasheet

 

PH7030L Datasheet and Replacement


   Type Designator: PH7030L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 544 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: LFPAK
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PH7030L Datasheet (PDF)

 ..1. Size:178K  philips
ph7030l.pdf pdf_icon

PH7030L

PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 ..2. Size:178K  nxp
ph7030l.pdf pdf_icon

PH7030L

PH7030LN-channel TrenchMOS logic level FETRev. 05 29 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and b

 8.1. Size:221K  philips
ph7030al.pdf pdf_icon

PH7030L

PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

 8.2. Size:221K  nxp
ph7030al.pdf pdf_icon

PH7030L

PH7030ALN-channel TrenchMOS logic level FETRev. 03 12 January 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications.1.2 Features and benefits High efficiency due

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: UT2311 | BRCS200P03DP | IRFB3004GPBF | SVS70R900SE3TR | BLS70R420-A | LKK47-06C5 | TSM4424CS

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