QJD1210007 Todos los transistores

 

QJD1210007 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QJD1210007
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 880 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de QJD1210007 MOSFET

   - Selección ⓘ de transistores por parámetros

 

QJD1210007 Datasheet (PDF)

 ..1. Size:419K  powerex
 qjd1210007.pdf pdf_icon

QJD1210007

QJD1210007 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 5.1. Size:419K  powerex
 qjd1210006.pdf pdf_icon

QJD1210007

QJD1210006 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 6.1. Size:478K  powerex
 qjd1210011.pdf pdf_icon

QJD1210007

QJD1210011 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 6.2. Size:477K  powerex
 qjd1210010.pdf pdf_icon

QJD1210007

QJD1210010 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

MOSTRAR MÁS

Otros transistores... PJ2306 , PJ4N3KDW , QH8KA1 , QH8KA2 , QH8MA2 , QH8MA3 , QH8MA4 , QJD1210006 , CS150N03A8 , QJD1210010 , QJD1210011 , QM0004D , QM0004G , QM0004P , QM0004S , QM0004U , QM0006G .

History: 2SK2503 | CEP45N10 | BUK9520-55A | SVS60R190KD4 | AUIRFP1405 | SVG15670NSA | MX2N4091

 

 
Back to Top

 


 
.