QJD1210007 Datasheet. Specs and Replacement
Type Designator: QJD1210007 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 880 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 1000 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: MODULE
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QJD1210007 substitution
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QJD1210007 datasheet
qjd1210007.pdf
QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap... See More ⇒
qjd1210006.pdf
QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap... See More ⇒
qjd1210011.pdf
QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo... See More ⇒
qjd1210010.pdf
QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo... See More ⇒
Detailed specifications: PJ2306, PJ4N3KDW, QH8KA1, QH8KA2, QH8MA2, QH8MA3, QH8MA4, QJD1210006, K3569, QJD1210010, QJD1210011, QM0004D, QM0004G, QM0004P, QM0004S, QM0004U, QM0006G
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History: STD18N65M5 | INK0103AC1 | FQD12N20TM | IXFH70N20Q3 | FDD5N50U | MTP4N80E | AGM13T30A
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