All MOSFET. QJD1210007 Datasheet

 

QJD1210007 MOSFET. Datasheet pdf. Equivalent

Type Designator: QJD1210007

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 880 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 200 °C

Total Gate Charge (Qg): 500 nC

Drain-Source Capacitance (Cd): 1000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: MODULE

QJD1210007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QJD1210007 Datasheet (PDF)

0.1. qjd1210007.pdf Size:419K _powerex

QJD1210007
QJD1210007

QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description: G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap

5.1. qjd1210006.pdf Size:419K _powerex

QJD1210007
QJD1210007

QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.com MOSFET Module 100 Amperes/1200 Volts A D Y K K K Y F U H S1D2 S2 D1 U J E B U H Z AB M AD U AC AA Description: G Q Q Q P N Powerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP) high frequency ap

 6.1. qjd1210011.pdf Size:478K _powerex

QJD1210007
QJD1210007

QJD1210011 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description: 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo

6.2. qjd1210010.pdf Size:477K _powerex

QJD1210007
QJD1210007

QJD1210010 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.com MOSFET Module 100 Amperes/1200 Volts Y A AA D AC AB F Z Q DETAIL "B" Q Q P U Description: 1 2 3 4 5 6 7 8 9 10 11 12 Powerex Silicon Carbide MOSFET X Modules are designed for use in B high frequency applications. Each M N E mo

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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