QJD1210007 MOSFET. Datasheet pdf. Equivalent

   Type Designator: QJD1210007
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Qgⓘ - Total Gate Charge: 500 nC
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: MODULE

QJD1210007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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