QJD1210010 Todos los transistores

 

QJD1210010 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: QJD1210010
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1080 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13.6 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: MODULE
     - Selección de transistores por parámetros

 

QJD1210010 Datasheet (PDF)

 ..1. Size:477K  powerex
 qjd1210010.pdf pdf_icon

QJD1210010

QJD1210010 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 5.1. Size:478K  powerex
 qjd1210011.pdf pdf_icon

QJD1210010

QJD1210011 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 6.1. Size:419K  powerex
 qjd1210007.pdf pdf_icon

QJD1210010

QJD1210007 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 6.2. Size:419K  powerex
 qjd1210006.pdf pdf_icon

QJD1210010

QJD1210006 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BRCS4614SC | BSC096N10LS5 | VSA007N02KD | FQD10N20CTF | 2SJ609 | TMT3N40ZG | IRF353

 

 
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