All MOSFET. QJD1210010 Datasheet

 

QJD1210010 Datasheet and Replacement


   Type Designator: QJD1210010
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1080 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: MODULE
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QJD1210010 Datasheet (PDF)

 ..1. Size:477K  powerex
 qjd1210010.pdf pdf_icon

QJD1210010

QJD1210010 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 5.1. Size:478K  powerex
 qjd1210011.pdf pdf_icon

QJD1210010

QJD1210011 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Split Dual SiC www.pwrx.comMOSFET Module100 Amperes/1200 VoltsY AAA DACABF Z Q DETAIL "B"Q Q P U Description:1 2 3 4 5 6 7 8 9 10 11 12Powerex Silicon Carbide MOSFET X Modules are designed for use in Bhigh frequency applications. Each MN E mo

 6.1. Size:419K  powerex
 qjd1210007.pdf pdf_icon

QJD1210010

QJD1210007 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

 6.2. Size:419K  powerex
 qjd1210006.pdf pdf_icon

QJD1210010

QJD1210006 PreliminaryPowerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Silicon Carbide www.pwrx.comMOSFET Module100 Amperes/1200 VoltsADY K K K YFUHS1D2 S2 D1UJ E BUHZABM ADUACAADescription:GQQ Q P NPowerex Silicon Carbide MOSFET S - NUTS (3 TYP) Modules are designed for use in T - (4 TYP)high frequency ap

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History: 20N03L-TO252 | 2N6762JTXV

Keywords - QJD1210010 MOSFET datasheet

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