QM2608N8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: QM2608N8

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 41 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm

Encapsulados: DFN3X2

 Búsqueda de reemplazo de QM2608N8 MOSFET

- Selecciónⓘ de transistores por parámetros

 

QM2608N8 datasheet

 ..1. Size:408K  ubiq
qm2608n8.pdf pdf_icon

QM2608N8

QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8A charge for most of the small power switching and -20V 70m -3.4A load switch applications. The QM2608N8 meet the RoHS and G

 9.1. Size:417K  ubiq
qm2605s.pdf pdf_icon

QM2608N8

QM2605S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42m 4.6A charge for most of the small power switching and -20V 130m -2.8A load switch applications. The QM2605S meet the RoHS and Gr

 9.2. Size:412K  ubiq
qm2605v.pdf pdf_icon

QM2608N8

QM2605V N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48m 3.8A charge for most of the small power switching and -20V 130m -2.5A load switch applications. The QM2605V meet the RoHS and Gr

 9.3. Size:409K  ubiq
qm2601s.pdf pdf_icon

QM2608N8

QM2601S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18m 7.2A charge for most of the small power switching and -20V 50m -4.5A load switch applications. The QM2601S meet the RoHS and Gree

Otros transistores... QM2520C1, QM2601S, QM2602S, QM2604V, QM2605S, QM2605V, QM2606C1, QM2607C1, RU7088R, QM2702D, QM2710D, QM2N7002E3K1, QM3001D, QM3001G, QM3001J, QM3001S, QM3001U