QM2608N8 MOSFET. Datasheet pdf. Equivalent

QM2608N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

QM2608N8 Datasheet (PDF)

0.1. qm2608n8.pdf Size:408K _ubiq

QM2608N8 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2608N8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48mΩ 3.8A charge for most of the small power switching and -20V 70mΩ -3.4A load switch applications. The QM2608N8 meet the RoHS and G

9.1. qm2602s.pdf Size:413K _ubiq

QM2602S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2602S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 16mΩ 7.7 A charge for most of the small power switching and -20V 50mΩ -4.6 A load switch applications. The QM2602S meet the RoHS and G

9.2. qm2607c1.pdf Size:360K _ubiq

QM2607C1 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2607C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 115mΩ 1.3 A charge for most of the small power switching and -20V 255mΩ -0.94 A load switch applications. The QM2607C1 meet the RoHS

 9.3. qm2604v.pdf Size:410K _ubiq

QM2604V N-Ch and P-Ch 20V Fast Switching MOSFETs General Description Product Summery The QM2604V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 50mΩ 3.8A charge for most of the small power switching and -20V 155 mΩ -2.3A load switch applications. The QM2604V meet the RoHS an

9.4. qm2605v.pdf Size:412K _ubiq

QM2605V N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605V is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 48mΩ 3.8A charge for most of the small power switching and -20V 130mΩ -2.5A load switch applications. The QM2605V meet the RoHS and Gr

 9.5. qm2606c1.pdf Size:392K _ubiq

QM2606C1 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2606C1 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 90mΩ 1.52A charge for most of the small power switching and -20V 240mΩ -1A load switch applications. The QM2606C1 meet the RoHS and G

9.6. qm2605s.pdf Size:417K _ubiq

QM2605S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2605S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 42mΩ 4.6A charge for most of the small power switching and -20V 130mΩ -2.8A load switch applications. The QM2605S meet the RoHS and Gr

9.7. qm2601s.pdf Size:409K _ubiq

QM2601S N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The QM2601S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and gate 20V 18mΩ 7.2A charge for most of the small power switching and -20V 50mΩ -4.5A load switch applications. The QM2601S meet the RoHS and Gree

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