PHT6N06LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHT6N06LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 13 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Paquete / Cubierta: SOT223

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PHT6N06LT Datasheet (PDF)

..1. Size:54K philips
pht6n06lt 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AThe device features very low Dr

7.1. Size:58K philips
pht6n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITlogic level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 AUsing trench technology

8.1. Size:57K philips
pht6n03t 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 30 Vsuitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 Atrench techno

8.2. Size:43K philips
pht6n03lt 3.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHT6N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 30 Vd Very low on-state resistance Fast switching ID = 5.9 A Stable off-state characteristics High thermal cycling performance RDS(ON) 30 m (VGS = 5 V)g Surface mounting packageRDS(ON)

Otros transistores... PHP6ND50E , PHP7N60E , PHP80N06LT , PHP87N03LT , PHP8N50E , PHP8ND50E , PHT11N06LT , PHT6N03LT , IRF830 , PHT8N06LT , PHW11N50E , PHW14N50E , PHW20N50E , PHW7N60E , PHW8N50E , PHW8ND50E , PHW9N60E .

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