PHT6N06LT Specs and Replacement
Type Designator: PHT6N06LT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 13 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: SOT223
PHT6N06LT substitution
- MOSFET ⓘ Cross-Reference Search
PHT6N06LT datasheet
pht6n06lt 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06LT Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A The device features very low Dr... See More ⇒
pht6n06t 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level field-effect power transistor in a plastic envelope VDS Drain-source voltage 55 V suitable for surface mounting. ID Drain current (DC) Tsp = 25 C 5.5 A Using trench technology... See More ⇒
pht6n03t 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor PHT6N03T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope VDS Drain-source voltage 30 V suitable for surface mounting. Using ID Drain current (DC) Tsp = 25 C 12.8 A trench techno... See More ⇒
Detailed specifications: PHP6ND50E, PHP7N60E, PHP80N06LT, PHP87N03LT, PHP8N50E, PHP8ND50E, PHT11N06LT, PHT6N03LT, AO4468, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E, PHW8ND50E, PHW9N60E
Keywords - PHT6N06LT MOSFET specs
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