RFP12N10 Todos los transistores

 

RFP12N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RFP12N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO-220AB
 

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RFP12N10 Datasheet (PDF)

 ..1. Size:94K  njs
 rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf pdf_icon

RFP12N10

 0.1. Size:131K  fairchild semi
 rfp12n10l.pdf pdf_icon

RFP12N10

RFP12N10LData Sheet April 200512A, 100V, 0.200 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 12A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.200power field effect transistors specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, automotiv

 0.2. Size:533K  onsemi
 rfp12n10l.pdf pdf_icon

RFP12N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:68K  njs
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RFP12N10

MOSTRAR MÁS

Otros transistores... RFM5P12 , RFM5P15 , RFM8P08 , RFM8P10 , RFP10N12 , RFP10N15 , RFP12N08 , RFP12N08L , 4N60 , RFP12N18 , RFP12N20 , RFP15N12 , RFP15N15 , RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 .

History: RJK6013DPE

 

 
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