All MOSFET. RFP12N10 Datasheet

 

RFP12N10 Datasheet and Replacement


   Type Designator: RFP12N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-220AB
 

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RFP12N10 Datasheet (PDF)

 ..1. Size:94K  njs
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RFP12N10

 0.1. Size:131K  fairchild semi
 rfp12n10l.pdf pdf_icon

RFP12N10

RFP12N10LData Sheet April 200512A, 100V, 0.200 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 12A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.200power field effect transistors specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, automotiv

 0.2. Size:533K  onsemi
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RFP12N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:68K  njs
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RFP12N10

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Datasheet: RFM5P12 , RFM5P15 , RFM8P08 , RFM8P10 , RFP10N12 , RFP10N15 , RFP12N08 , RFP12N08L , 4N60 , RFP12N18 , RFP12N20 , RFP15N12 , RFP15N15 , RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 .

History: SM6008NF | DH045N06E | 2SK1813 | HAT2174N | AP60SL600AIN

Keywords - RFP12N10 MOSFET datasheet

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