RFP12N20 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP12N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm

Encapsulados: TO-220AB

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RFP12N20 datasheet

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RFP12N20

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RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

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RFP12N20

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

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RFP12N20

MOSTRAR MÁS

Otros transistores... RFM8P08, RFM8P10, RFP10N12, RFP10N15, RFP12N08, RFP12N08L, RFP12N10, RFP12N18, IRF1010E, RFP15N12, RFP15N15, RFP2N08, RFP2N10, RFP5P12, RFP5P15, RFP8P08, RHK003N06FRA