RFP12N20 Datasheet. Specs and Replacement

Type Designator: RFP12N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO-220AB

RFP12N20 substitution

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RFP12N20 datasheet

 8.1. Size:215K  fairchild semi
rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf pdf_icon

RFP12N20

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate... See More ⇒

 8.2. Size:131K  fairchild semi
rfp12n10l.pdf pdf_icon

RFP12N20

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv... See More ⇒

Detailed specifications: RFM8P08, RFM8P10, RFP10N12, RFP10N15, RFP12N08, RFP12N08L, RFP12N10, RFP12N18, IRF1010E, RFP15N12, RFP15N15, RFP2N08, RFP2N10, RFP5P12, RFP5P15, RFP8P08, RHK003N06FRA

Keywords - RFP12N20 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.