RHK003N06T146 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RHK003N06T146
Código: RKS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.2 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 3 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 14 pF
Resistencia entre drenaje y fuente RDS(on): 1 Ohm
Paquete / Cubierta: SMT3
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RHK003N06T146 Datasheet (PDF)
rhk003n06t146.pdf
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RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn
rhk003n06t146.pdf
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RHK003N06T146www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD Protection
rhk003n06fra.pdf
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RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :
rhk005n03t146.pdf
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RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications
rhk005n03fra.pdf
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RHK005N03FRARHK005N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK005N03FRARHK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbrevia
rhk005n03.pdf
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RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications
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