RHK003N06T146 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RHK003N06T146

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: SMT3

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RHK003N06T146 datasheet

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 rhk003n06t146.pdf pdf_icon

RHK003N06T146

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol RKS Packaging specifications and hFE Inn

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 rhk003n06t146.pdf pdf_icon

RHK003N06T146

RHK003N06T146 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection

 5.1. Size:913K  rohm
 rhk003n06fra.pdf pdf_icon

RHK003N06T146

RHK003N06FRA RHK003N06 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK003N06FRA RHK003N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol

 9.1. Size:51K  rohm
 rhk005n03t146.pdf pdf_icon

RHK003N06T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KU Packaging specifications

MOSTRAR MÁS

Otros transistores... RFP15N12, RFP15N15, RFP2N08, RFP2N10, RFP5P12, RFP5P15, RFP8P08, RHK003N06FRA, TK10A60D, RHK005N03FRA, RHK005N03T146, RHP020N06T100, RHP030N03T100, RHU002N06, RHU002N06FRA, RHU003N03, RHU003N03FRA