Справочник MOSFET. RHK003N06T146

 

RHK003N06T146 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: RHK003N06T146

Маркировка: RKS

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 0.3 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 3 nC

Время нарастания (tr): 5 ns

Выходная емкость (Cd): 14 pf

Сопротивление сток-исток открытого транзистора (Rds): 1 Ohm

Тип корпуса: SMT3

Аналог (замена) для RHK003N06T146

 

RHK003N06T146 Datasheet (PDF)

1.1. rhk003n06t146.pdf Size:52K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn

1.2. rhk003n06fra.pdf Size:913K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK003N06FRA RHK003N06 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK003N06FRA RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol :

 5.1. rhk005n03fra.pdf Size:911K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK005N03FRA RHK005N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK005N03FRA RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbrevia

5.2. rhk005n03t146.pdf Size:51K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications

 5.3. rhk005n03.pdf Size:53K _rohm

RHK003N06T146
RHK003N06T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications and

Другие MOSFET... RFP15N12 , RFP15N15 , RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , 2SK170 , RHK005N03FRA , RHK005N03T146 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA .

 

 
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