All MOSFET. RHK003N06T146 Datasheet

 

RHK003N06T146 MOSFET. Datasheet pdf. Equivalent

Type Designator: RHK003N06T146

Marking Code: RKS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 3 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 14 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: SMT3

RHK003N06T146 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RHK003N06T146 Datasheet (PDF)

1.1. rhk003n06fra.pdf Size:913K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK003N06FRA RHK003N06 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK003N06FRA RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol :

1.2. rhk003n06t146.pdf Size:52K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn

 5.1. rhk005n03t146.pdf Size:51K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications

5.2. rhk005n03fra.pdf Size:911K _update_mosfet

RHK003N06T146
RHK003N06T146

RHK005N03FRA RHK005N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK005N03FRA RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbrevia

 5.3. rhk005n03.pdf Size:53K _rohm

RHK003N06T146
RHK003N06T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) High speed switching. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol : KU Packaging specifications and

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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